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An advance in multifunctional electronics

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Qi Li and her colleagues report in Nature Materials an alternative way of creating a "multiferroic" device that is compatible with non-silicon technology and that combines into one device both an electronic and a magnetic junction.

The concept integrates a magnetic tunnel junction with a ferroelectric material. The ensuing electroresistance is highly enhanced (by over 10000%) and also defines a pathway for creating multilevel logic devices.

Read the article from Nature Materials online here.