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Jun Zhu

Jun Zhu

Main Content

  • Associate Professor of Physics
321 Davey
Email: jxz26 [ AT ] psu [ DOT ] edu
Phone: (814) 865-4376

Education

  1. University of Science and Technology of China (USTC) (B.S., Physics), 1996
  2. Columbia University (Ph.D., Physics), 2003

Specialties:

Condensed Matter Physics
  • Experimental

Honors and Awards

  • NSF CAREER Award 2008-2013

Selected Publications

  1. J. Li, K. Wang, K. J. McFaul, Z. Zern, Y. F. Ren, K. Watanabe, T. Taniguchi, Z. H. Qiao, J. Zhu, Gate-controlled topological conducting channels in bilayer graphene”, Nature Nanotechnology, 11, 1060 (2016) 

  2. Junjie Wang, Daniel Rhodes, Simin Feng, Minh An T. Nguyen, K. Watanabe, T. Taniguchi, Thomas E. Mallouk, Mauricio Terrones, Luis Balicas, J. Zhu, “Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states”, Appl. Phys. Lett. 106, 152104 (2015) 
  3. K. Zou, F. Zhang, C. Clapp, A.H. MacDonald and J. Zhu, “Transport studies of dual-gated ABC and ABA trilayer graphene:  band gap opening and band structure tuning in very large perpendicular electric field”, Nano Lett., 13, 369 (2013)
  4. X. Hong, K. Zou, B. Wang, S.-H. Cheng and J. Zhu, “Evidence for spin-flip scattering and local moments in dilute fluorinated graphene”, Phys. Rev. Lett. 108, 226602 (2012)
  5. K. Zou, X. Hong and J. Zhu, “Effective mass of electrons and holes in bilayer graphene: electron-hole asymmetry and electron-electron interaction”, Phys. Rev. B 84, 085408 (2011)
  6. X. Hong, S.-H. Cheng, C. Herding and J. Zhu, “Colossal negative magnetoresistance in dilute fluorinated graphene”, Phys. Rev. B 83, 085410 (2011)
  7. K. Zou, and J. Zhu, “Transport in gapped bilayer graphene: The role of potential fluctuations”, Phys. Rev. B 82, 081407 (R) (2010)
  8. K. Zou, X. Hong, D. Keefer, and J. Zhu, “The deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering”, Phys. Rev. Lett. 105, 126601 (2010)
  9. S. Cheng, K. Zou, F. Okino, H.R. Gutierrez, A. Gupta, N. Shen, P. Eklund, J.O. Sofo, and J. Zhu, “Reversible fluorination of graphene: evidence of a two-dimensional wide band gap semiconductor”, Phys. Rev. B 81, 205435 (2010)
  10. X. Hong, A. Posadas, K. Zou, C. H. Ahn and J. Zhu, “High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides”, Phys. Rev. Lett. 102, 136808 (2009)
  11. J. Zhu, Markus Brink, and Paul L. McEuen, “Single-Electron Force Readout of Nanoparticle Electrometers Attached to Carbon Nanotubes”, Nano Lett., 8, 2399 (2008)
  12. J. Zhu, H. L. Stormer, L. N. Pfeiffer, K. W Baldwin and K. W. West, “Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System”, Phys. Rev. Lett, 90, 056803 (2003)
  13. J. Zhu, W. Pan, H. L. Stormer, L. N. Pfeiffer, and K. W. West, “Density-Induced Interchange of Anisotropy Axes at Half-Filled High Landau Levels”, Phys. Rev. Lett. 88, 116803 (2002)

Research Interests

Research in the Zhu lab investigates the electronic properties of low dimensional materials and nanostructures. Our current projects focus on layered materials including graphene and transitional metal dichalcogenides such as (Mo/W)(S/Se)2. These atomically thin materials possess unique electronic structures that lead to novel collective phenomena in two dimensions and opportunities to create new device concepts that are based on bottom-up, layer-by-layer assembly techniques. We seek to understand the properties of pristine materials and exploit the role of substrate, defect, interface, stacking and heterojunctions to create new physics and functionalities, combining synthesis, nanofabrication, low-temperature transport and a suite of powerful characterization techniques.

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