You are here: Home / Seminars / Seminar Database / CAMP Seminar: Floquet Topological Insulator in Graphene

CAMP Seminar: Floquet Topological Insulator in Graphene

Main Content

Carlos A. Balseiro, Centro Atómico Bariloche, Argentina
When
23 September 2014 from 3:30 PM to 4:30 PM
Where
339 Davey Laboratory
Contact Name
Contact Phone
(814) 777-3450
Add event to calendar
vCal
iCal

In the presence of a circularly polarized mid-infrared radiation, graphene develops dynamical bands and becomes a Floquet insulator. Topologically protected edge states arise inside these gaps. The dynamical gaps are bridged by two chiral edge states whose propagation direction is set by the direction of the polarization of the radiation field. Therefore, both the propagation direction and the energy window where the states appear can be controlled externally. Simple topological arguments that account for the edge states and numerical calculations supporting these ideas will be presented. Using Floquet scattering theory the dc conductance and quantum Hall response is analysed.

Seminars